4N60Z-E Datasheet (Unisonic Technologies)

4N60Z-E, N-CHANNEL POWER MOSFET

The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power suppl

4N60Z-E Features

* RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60ZL-TF1-T 4N60ZG-TF1-T Note: Pin Assignment: