4N60Z-E Datasheet, Mosfet, Unisonic Technologies

4N60Z-E Features

• Mosfet
• RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A
• Fast Switching Capability
• Avalanche Energy Specified
• Improved dv/dt Capability, high Ruggedness
• SYMBOL

PDF File Details

Part number:

4N60Z-E

Manufacturer:

Unisonic Technologies

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202.30kb

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📄 Datasheet

Description:

N-channel power mosfet. The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate

4N60Z-E Application

• Applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
• FEATURES
• RDS(ON)=2.5

TAGS

4N60Z-E

Unisonic Technologies

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