4N60Z-E Datasheet - Unisonic Technologies

4N60Z-E N-CHANNEL POWER MOSFET

The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppl.

4N60Z-E Features

* RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, high Ruggedness

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60ZL-TF1-T 4N60ZG-TF1-T Note: Pin Assignment:

4N60Z-E Datasheet (202.30 KB)

4N60Z-E Datasheet Preview — Preview of 4N60Z-E PDF

Datasheet Details

Part number:

4N60Z-E

Manufacturer:

Unisonic Technologies

File Size:

202.30 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

4N60Z 40A 600V N-CHANNEL POWER MOSFET (UNISONIC TECHNOLOGIES)

4N60 4A 600V N-channel Enhancement Mode Power MOSFET (ROUM)

4N60 Power MOSFET (Zibo Seno)

4N60 N-CHANNEL MOSFET (KIA)

4N60 N-CHANNEL POWER MOSFET (UTC)

4N60 N-Channel Power MOSFET (nELL)

4N60 Surface Mount N-Channel Power MOSFET (WEITRON)

4N60 N-Channel Mosfet Transistor (INCHANGE)

4N60 N-Channel MOSFET (HAOHAI)

4N60-C N-CHANNEL POWER MOSFET (Unisonic Technologies)

TAGS

4N60Z-E N-CHANNEL POWER MOSFET Unisonic Technologies

Image Gallery

4N60Z-E Distributor