CHA2395 Datasheet - United Monolithic Semiconductors

36-40GHz Low Noise Very High Gain Amplifier

CHA2395 Features

* Broadband performances

* 3.0dB Noise Figure

* 30dB gain

* ±1.0dB gain flatness

* Low DC power consumption, 90mA@3.5V

* Chip size: 2.07 X 1.11 X 0.10 mm Main Characteristics Tamb. = 25°C Typical on wafer measurements 35 6 30 5 25 4 20 3 15 2 10 1 50 30 31 32 33 34 35 36 37

CHA2395 General Description

The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate li.

CHA2395 Datasheet (98.23 KB)

CHA2395 Datasheet Preview — Preview of CHA2395 PDF

Datasheet Details

Part number:

CHA2395

Manufacturer:

United Monolithic Semiconductors

File Size:

98.23 KB

Description:

36-40ghz low noise very high gain amplifier.

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CHA2395 36-40GHz Low Noise Very High Gain Amplifier United Monolithic Semiconductors

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CHA2395 Features

CHA2395 General Description

Datasheet Details

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