CHA5115-99F Datasheet, Amplifier, United Monolithic Semiconductors

CHA5115-99F Features

• Amplifier  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point:

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Part number:

CHA5115-99F

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United Monolithic Semiconductors

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📄 Datasheet

Description:

X-band medium power amplifier. The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29

CHA5115-99F Application

• Applications The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufac

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CHA5115-99F

United Monolithic Semiconductors

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