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CHA5115-99F X-band Medium Power Amplifier

CHA5115-99F Description

CHA5115-99F X-band Medium Power Amplifier GaAs Monolithic Microwave IC .
The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

CHA5115-99F Features

*  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(%) & Gain(dB) 44 PAE @ 3dB comp 42 40 38 36

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X-band Medium Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA5115-99F-like datasheet