CHA5115-QDG X-band Medium Power Amplifier

United Monolithic Semiconductors

Description

CHA5115-QDG X-band Medium Power Amplifier GaAs Monolithic Microwave IC .
The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

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Datasheet Specifications

Part number: CHA5115-QDG
Manufacturer: United Monolithic Semiconductors
File Size: 838.27 KB
Datasheet: CHA5115-QDG-UnitedMonolithicSemiconductors.pdf
Description: X-band Medium Power Amplifier

Features

*  Frequency band: 8-12GHz  Output power: 28dBm @ 3dBcomp  Linear gain: 21.5dB  High PAE: 30% @ 3dBcomp  Quiescent bias point: Vd=8V, Id=190mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 35 33 31 29 27 25 23 21 19 17 15 7 25 23 21 19 17 15 13 PAE_3dBcomp @ Temp=25°C 11 Pout_3dBcomp @ Tem

CHA5115-QDG Distributors

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CHA5115-QDG X-band Medium Power Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA5115-QDG-like datasheet