CHA5356-QGG Datasheet - United Monolithic Semiconductors

CHA5356-QGG GaAs Monolithic Microwave

The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS c.

CHA5356-QGG Features

* Broadband performances: 17.7-23.6GHz 35 Saturated power

* 33dBm Pout in saturation UMS

* 38dBmOIP3

* 19dB Gain

* 30dB power detection dynamic

* DC bias: Vd=6.0Volt@Id=700mA

* QGG-QFN5x5

* MSL3 34 33 32 31 30 -40 °C 25 °C 85 °C 29 28 17 18 19 20 21 22 23

CHA5356-QGG Datasheet (567.02 KB)

CHA5356-QGG Datasheet Preview — Preview of CHA5356-QGG PDF

Datasheet Details

Part number:

CHA5356-QGG

Manufacturer:

United Monolithic Semiconductors

File Size:

567.02 KB

Description:

Gaas monolithic microwave.

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TAGS

CHA5356-QGG GaAs Monolithic Microwave United Monolithic Semiconductors

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