CHA3656-FAB - Low Noise Amplifier

United Monolithic Semiconductors

Datasheet Details

Part number	CHA3656-FAB
Manufacturer	United Monolithic Semiconductors
File Size	1.03 MB
Description	Low Noise Amplifier
Datasheet	CHA3656-FAB-UnitedMonolithicSemiconductors.pdf

The CHA3656-FAB is a two-stage selfbiased wide band monolithic Low Noise Amplifier.

Broadband performances: 5.8-16GHz.
14.5dBm power at 1dB gain compression.
1.75dB Noise Figure.
20dB Linear Gain.
DC bias: Vd1=Vd2=3.3V, Id=70mA.
20 Leads-SMD.
6x6mm² hermetic metal ceramic package Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 5.8 16 GHz Gain Linear Gain 20 dB NF Noise Figure 1.75 dB Pout Output Power @1dB comp. 14.5 dBm ESD Protection: Electrostatic discharge sensitive dev.

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Published: Jan 26, 2025 |