Description
The CHK8015-99F is a 16W Gallium Nitride High Electron Mobility Transistor.
Features
- Wide band capability up to 18GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VD=30V @ID_Q=200mA.
- Chip size 0.88x2x0.1mm.
- RoHS N°2011/65.
- REACh N°1907/2006
Main Electrical Characteristics
Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA
Symbol
Parameter
Min Typ
GSS
Small Signal Gain
17
PSAT
Saturated Output Power
20
PAE
Max Power Added Efficiency
68
GPAE_MAX Associated Gain at Max PAE
11
These value.
CHK8015-99F-UnitedMonolithicSemiconductors.pdf
