UJ3N120035K3S Power N-Channel JFET

UnitedSiC

Description

Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 35 mohm | UJ3N120035K3S Datasheet .
United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors.

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Datasheet Specifications

Part number: UJ3N120035K3S
Manufacturer: UnitedSiC
File Size: 686.26 KB
Datasheet: UJ3N120035K3S-UnitedSiC.pdf
Description: Power N-Channel JFET

Applications

* w Over current protection circuits w DC-AC inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Maximum Ratings Parameter Symbol Test Conditions Drain-source voltage Gate-source voltage VDS DC VGS AC (1) Continuous drain current (2) Pu

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UJ3N120035K3S Power N-Channel JFET UnitedSiC

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