UJ3N120035K3S Datasheet (UnitedSiC)

UJ3N120035K3S, Power N-Channel JFET

United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal f

UJ3N120035K3S Features

* w Typical on-resistance RDS(on),typ of 35mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical Applications w Over current protection circuits w DC-AC inverters