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UJ3N120065K3S

Silicon Carbide JFET

UJ3N120065K3S Features

* w Typical on-resistance RDS(on),typ of 66mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UJ3N120065K3S Package TO-247-3L Marking UJ3N120065K3S Typic

UJ3N120065K3S General Description

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protec.

UJ3N120065K3S Datasheet (561.21 KB)

Preview of UJ3N120065K3S PDF

Datasheet Details

Part number:

UJ3N120065K3S

Manufacturer:

UnitedSiC

File Size:

561.21 KB

Description:

Silicon carbide jfet.
DATASHEET UJ3N120065K3S CASE CASE D (2) 123 G (1) S (3) Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 66 mohm Rev. B.

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UJ3N120065K3S Silicon Carbide JFET UnitedSiC

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