UJ3N120065K3S Silicon Carbide JFET

UnitedSiC

Description

DATASHEET UJ3N120065K3S CASE CASE D (2) 123 G (1) S (3) Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 66 mohm Rev.B.
UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors.

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Datasheet Specifications

Part number: UJ3N120065K3S
Manufacturer: UnitedSiC
File Size: 561.21 KB
Datasheet: UJ3N120065K3S-UnitedSiC.pdf
Description: Silicon Carbide JFET

Features

* w Typical on-resistance RDS(on),typ of 66mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UJ3N120065K3S Package TO-247-3L Marking UJ3N120065K3S Typic

Applications

* w Over Current Protection Circuits w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3N120065K3S Rev. B, January 2025 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 2 Pu

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UJ3N120065K3S Silicon Carbide JFET UnitedSiC

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