UJ3N120065K3S Datasheet - UnitedSiC

UJ3N120065K3S Silicon Carbide JFET

UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protec.

UJ3N120065K3S Features

* w Typical on-resistance RDS(on),typ of 66mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Part Number UJ3N120065K3S Package TO-247-3L Marking UJ3N120065K3S Typic

UJ3N120065K3S-UnitedSiC.pdf