AO3407A
VBsemi
238.35kb
P-channel mosfet.
TAGS
📁 Related Datasheet
AO3407 - 30V P-Channel MOSFET
(Alpha & Omega Semiconductors)
AO3407
30V P-Channel MOSFET
General Description
The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This de.
AO3407 - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel Enhancement MOSFET
MOSFET IC
AO3407
(KO3407)
SOT-23
Unit: mm
+0.1 2.4 -0.1
ID = -4.1 A RDS(ON) RDS(ON) 52m 87m (VGS = -10V) (V.
AO3407 - P-Channel MOSFET
(HOTTECH)
Plastic-Encapsulate Mosfets
FEATURES
The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit.
AO3407 - P-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
AO3407
Rev.C Nov.-2015
DATA SHEET
/ Descriptions SOT-23 P MOS 。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
/ Features
VDS (V) = -30V ID = -4.
AO3407 - P-Channel MOSFET
(VBsemi)
AO3407
AO3407 P-Channel 30 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 10 V
- 30
0.049 at VGS = - .
AO3407A - 30V P-Channel MOSFET
(Alpha & Omega Semiconductors)
AO3407A
30V P-Channel MOSFET
General Description
The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This .
AO3400 - 30V N-Channel MOSFET
(Alpha & Omega Semiconductors)
AO3400
30V N-Channel MOSFET
General Description
Product Summary
The AO3400 bines advanced trench MOSFET technology with a low resistance package.
AO3400 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFIECT
N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400)
Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS.
AO3400 - N-Channel MOSFET
(HOTTECH)
Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den.
AO3400 - 30V N-Channel MOSFET
(JinYu)
30V N-Channel Enhancement Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ.