* TrenchFET® Power MOSFET
* 150 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise n
PB210BD
VBsemi
245.60 KB
N-channel 100v mosfet.
PB210BD-VB PB210BD-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1.
📁 Related Datasheet
PB210BC N-Channel MOSFET (UNIKC)
PB210BD N-Channel MOSFET (UNIKC)
PB210BD N-Channel MOSFET (NIKO-SEM)
PB210BI MOSFET (UNIKC)
PB210BM N-Channel MOSFET (UNIKC)
PB210BTF N-Channel MOSFET (UNIKC)
PB210BV MOSFET (UNIKC)
PB210HV MOSFET (UNIKC)
PB2141 Phase Shifter (Clear Microwave)
PB2162A mobile power SOC (HOTCHIP)
