Datasheet Specifications
- Part number
- PB210BD
- Manufacturer
- VBsemi
- File Size
- 245.60 KB
- Datasheet
- PB210BD-VBsemi.pdf
- Description
- N-Channel 100V MOSFET
Description
PB210BD-VB PB210BD-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 1.
Features
* TrenchFET® Power MOSFETApplications
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM ContinuouPB210BD Distributors
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