PB210BD Datasheet - VBsemi

PB210BD N-Channel 100V MOSFET

PB210BD Features

* TrenchFET® Power MOSFET

* 150 °C Junction Temperature

* PWM Optimized

* 100 % Rg Tested

* Compliant to RoHS Directive 2002/95/EC APPLICATIONS

* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise n

Datasheet Details

PB210BD

VBsemi

245.60 KB

N-channel 100v mosfet.

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PB210BD N-Channel 100V MOSFET VBsemi

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