Datasheet4U Logo Datasheet4U.com

VB4610N Dual P-Channel MOSFET

VB4610N Description

VB4610N Dual P-Channel 60-V (D-S) MOSFET 001 www.VBsemi.com PRODUCT SUMMARY VDS (V) -60 RDS(on) (Ω ) Typ.0.070 at VGS = -10 V 0.085 at VGS = -4..

VB4610N Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Compliant to RoHS Directive 2002/95/EC S1 S2 G1 G2 2.85 mm D1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-

📥 Download Datasheet

Preview of VB4610N PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VB4610N
Manufacturer
VBsemi
File Size
281.68 KB
Datasheet
VB4610N-VBsemi.pdf
Description
Dual P-Channel MOSFET

📁 Related Datasheet

  • VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VB40100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VB40100G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB40120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB40150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB40170C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

📌 All Tags

VBsemi VB4610N-like datasheet