* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VB40100C-E3 Datasheet (1.09 MB)
VB40100C-E3
1.09 MB
Dual high voltage trench mos barrier schottky rectifier.
V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier .
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