Part number:
VB40100C-E3
Manufacturer:
File Size:
1.09 MB
Description:
Dual high voltage trench mos barrier schottky rectifier.
VB40100C-E3 Datasheet (1.09 MB)
Datasheet Details
VB40100C-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VB40100C-E3 Datasheet (1.09 MB)
Datasheet Details
VB40100C-E3
1.09 MB
Dual high voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
VB40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB40100C-E3 Distributor