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VB40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB40M120C Description

New Product VB40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A .

VB40M120C Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Compliant

VB40M120C Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 250 A 0.64 V 150 °C Case: TO-263AB Molding compound meets UL 94 V-0 flammability ratin

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Datasheet Details

Part number
VB40M120C
Manufacturer
Vishay ↗
File Size
682.15 KB
Datasheet
VB40M120C_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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