VB40M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB40M120C
Manufacturer	Vishay
File Size	682.15 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40M120C_Vishay.pdf

Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VB40M120C PIN 1 PIN 2 K.

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Published: Mar 28, 2012 |