VB40M120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB40M120C-E3
Manufacturer	Vishay
File Size	Direct Link
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40M120C-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 VB40M120C-E3 Similar Datasheet

VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VB408 - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408B - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB408FI - HIGH VOLTAGE LINEAR REGULATOR POWER I.C. (STMicroelectronics)
VB409 - HIGH VOLTAGE REGULATOR POWER I.C. (STMicroelectronics)
VB409SP - HIGH VOLTAGE REGULATOR POWER I.C. (STMicroelectronics)
VB4610N - Dual P-Channel MOSFET (VBsemi)

Other Datasheets by Vishay

Published: Aug 22, 2017 |