VB40150C-E3 Datasheet - Vishay

VB40150C-E3, Dual High Voltage Trench MOS Barrier Schottky Rectifier

V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

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Datasheet Details

Part number:

VB40150C-E3

Manufacturer:

Vishay ↗

File Size:

201.97 KB

Description:

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

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VB40150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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