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VB40170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB40170C Description

VB40170C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS .

VB40170C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK
* Material categorization: For definitions of compl

VB40170C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 170 V 200 A 0.68 V 175 °C Case: TO-263AB Molding compound meets UL 94 V

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Datasheet Details

Part number
VB40170C
Manufacturer
Vishay ↗
File Size
110.49 KB
Datasheet
VB40170C_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VB40170C-like datasheet