* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK
* Material categorization: For definitions of compl
VB40170C Datasheet (110.49 KB)
VB40170C
110.49 KB
Dual high-voltage trench mos barrier schottky rectifier.
VB40170C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS .
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