VB40170C Datasheet - Vishay

VB40170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB40170C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK

* Material categorization: For definitions of compl

Datasheet Details

VB40170C

110.49 KB

Dual high-voltage trench mos barrier schottky rectifier.

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