VBPB1102N Datasheet - VBsemi

VBPB1102N, N-Channel MOSFET

VBPB1102N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S.

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Datasheet Details

Part number:

VBPB1102N

Manufacturer:

VBsemi

File Size:

220.29 KB

Description:

N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package

Applications

* Isolated DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Cu

VBPB1102N Distributors

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VBPB1102N N-Channel MOSFET VBsemi

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