* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* 100 % Rg Tested APPLICATIONS
* Isolated DC/DC Converters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-So
VBPB1102N Datasheet (220.29 KB)
VBPB1102N
VBsemi
220.29 KB
N-channel mosfet.
VBPB1102N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S.
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