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VBPB112MI50 Datasheet - VBsemi

1200V Trench and Fieldstop IGBT

VBPB112MI50 Features

* Very Low VCEsat

* Low turn-off losses

* High speed switching

* Maximum junction temperature 175°C

* Ultra low gate charge (Qg)

* Avalanche energy rated (UIS) APPLICATIONS

* Telecommunications - Server and telecom power supplies

* Ligh

VBPB112MI50 Datasheet (3.18 MB)

Preview of VBPB112MI50 PDF

Datasheet Details

Part number:

VBPB112MI50

Manufacturer:

VBsemi

File Size:

3.18 MB

Description:

1200v trench and fieldstop igbt.
VBPB112MI50 1200V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 1200 100 (TC=25 ) 50 (TC=100 ) VCE sat (V) 1.7 ICM (A.

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VBPB112MI50 1200V Trench and Fieldstop IGBT VBsemi

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