Part number:
VBPB112MI25
Manufacturer:
VBsemi
File Size:
3.63 MB
Description:
1200v trench and fieldstop igbt.
Datasheet Details
VBPB112MI25 Features
* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Telecommunications - Server and telecom power supplies
* Ligh
Datasheet Details
VBPB112MI25
VBsemi
3.63 MB
1200v trench and fieldstop igbt.
📁 Related Datasheet
VBPB112MI40 1200V Trench and Fieldstop IGBT (VBsemi)
VBPB112MI50 1200V Trench and Fieldstop IGBT (VBsemi)
VBPB1102N N-Channel MOSFET (VBsemi)
VBPB165R20S N-Channel MOSFET (VBsemi)
VBPB165R47S N-Channel MOSFET (VBsemi)
VBPB16I15 600V Trench and Fieldstop IGBT (VBsemi)
VBPB16I20 600V Trench and Fieldstop IGBT (VBsemi)
VBP104FAS Silicon PIN Photodiode (Vishay)
VBPB112MI25 Distributor