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2N6341 - NPN High Power Silicon Transistor

This page provides the datasheet information for the 2N6341, a member of the 2N6338 NPN High Power Silicon Transistor family.

Datasheet Summary

Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/509.
  • TO-3 (TO-204AA) Package.
  • Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit.

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Datasheet preview – 2N6341

Datasheet Details

Part number 2N6341
Manufacturer VPT
File Size 463.00 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N6341 Datasheet
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Full PDF Text Transcription

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2N6338, 2N6341 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/509 • TO-3 (TO-204AA) Package • Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit Applications Rev. V2 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 50 mA dc, 2N6338 IC = 50 mA dc, 2N6341 V(BR)CEO V dc 100 150 — Collector - Emitter Cutoff Current Emitter - Base Cutoff Current VCE = 50 V dc, 2N6338 VCE = 75 V dc, 2N6341 VEB = 6.0 Vdc ICEO µA dc — 50 50 IEBO µA dc — 100 Collector - Emitter Cutoff Current VCE = 100 V dc; VBE = -1.5 V dc, 2N6338 VCE = 150 V dc; VBE = -1.
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