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2N6338, 2N6341
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/509 • TO-3 (TO-204AA) Package • Designed for Use in Hi-Reliability Power Amplifier and
Switching Circuit Applications
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
IC = 50 mA dc, 2N6338 IC = 50 mA dc, 2N6341
V(BR)CEO V dc
100 150
—
Collector - Emitter Cutoff Current Emitter - Base Cutoff Current
VCE = 50 V dc, 2N6338 VCE = 75 V dc, 2N6341
VEB = 6.0 Vdc
ICEO µA dc
—
50 50
IEBO µA dc
—
100
Collector - Emitter Cutoff Current
VCE = 100 V dc; VBE = -1.5 V dc, 2N6338 VCE = 150 V dc; VBE = -1.