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VST12N100

MOSFET

VST12N100 Features

* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switch

VST12N100 General Description

The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

VST12N100 Datasheet (717.03 KB)

Preview of VST12N100 PDF

Datasheet Details

Part number:

VST12N100

Manufacturer:

VSEEI

File Size:

717.03 KB

Description:

Mosfet.

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VST12N100 MOSFET VSEEI

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