VST12N100, VST12N100-TF Datasheet - VSEEI

VST12N100 MOSFET

The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

VST12N100 Features

* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switch

VST12N100-TF-VSEEI.pdf

VST12N100 Datasheet Preview — This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

VST12N100, VST12N100-TF

Manufacturer:

VSEEI

File Size:

717.03 KB

Description:

Mosfet.

Note:

This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF.
Please refer to the document for exact specifications by model.

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VST12N100 VST12N100-TF MOSFET VSEEI

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