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VST12N100, VST12N100-TF Datasheet - VSEEI

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VST12N100, VST12N100-TF MOSFET

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The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VST12N100-TF-VSEEI.pdf

This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

VST12N100, VST12N100-TF

Manufacturer:

VSEEI

File Size:

717.03 KB

Description:

MOSFET

Note:

This datasheet PDF includes multiple part numbers: VST12N100, VST12N100-TF.
Please refer to the document for exact specifications by model.

Features

* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating

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