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SI2399DS Datasheet - Vishay Siliconix

SI2399DS P-Channel MOSFET

The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 5 V gate drive. The saturated output impedance is best fit at the gate bia.

SI2399DS_VishaySiliconix.pdf

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Datasheet Details

Part number:

SI2399DS

Manufacturer:

Vishay ↗ Siliconix

File Size:

126.25 KB

Description:

P-channel mosfet.

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SI2399DS SI2399DS P-Channel MOSFET Vishay Siliconix

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