SIHFPE30 Power MOSFET

Vishay Siliconix

Description

Power MOSFET IRFPE30, SiHFPE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 800 VGS = 10 V 78 Qgs (nC) 9.6 Qgd (nC) 45 .
Third Generation Power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance a.

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Datasheet Specifications

Part number: SIHFPE30
Manufacturer: Vishay ↗ Siliconix
File Size: 1.50 MB
Datasheet: SIHFPE30_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rated
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available RoHS

Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMAT

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SIHFPE30 Power MOSFET Vishay Siliconix

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