SIHFPE50 Power MOSFET

Vishay Siliconix

Description

IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 200 24 .
G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.

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Datasheet Specifications

Part number: SIHFPE50
Manufacturer: Vishay ↗ Siliconix
File Size: 1.56 MB
Datasheet: SIHFPE50_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 800 1.2
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS

Applications

* where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORDERING INFORMATION

SIHFPE50 Distributors

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SIHFPE50 Power MOSFET Vishay Siliconix

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