VI40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Datasheet Details

Part number	VI40100G
Manufacturer	Vishay Siliconix
File Size	189.52 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI40100G_VishaySiliconix.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Published: Dec 4, 2009 |