Datasheet4U Logo Datasheet4U.com

VI40150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VI40150C-E3 Description

V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifi.

VI40150C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

📥 Download Datasheet

Preview of VI40150C-E3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VI40150C-E3
Manufacturer
Vishay ↗
File Size
201.97 KB
Datasheet
VI40150C-E3-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VI40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

📌 All Tags

Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VI40150C-E3-like datasheet