Part number:
VI40100G-E3
Manufacturer:
File Size:
145.60 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
VI40100G-E3 Datasheet (145.60 KB)
Datasheet Details
VI40100G-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VI40100G-E3 Datasheet (145.60 KB)
Datasheet Details
VI40100G-E3
145.60 KB
Dual high voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
VI40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VI40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VI40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI40120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI40150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI40150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VI40100G-E3 Distributor