VI40M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VI40M120C
Manufacturer	Vishay
File Size	783.78 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI40M120C_Vishay.pdf

Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ®.
Trench MOS Schottky technology TO-262AA.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
Halogen-free according to IEC 61249-2-21 definition K 2 V40M120C PIN 1 PIN 3 3 1 VI40M120C PIN 1 PIN 3 2 3 1 PIN 2 CASE TYPIC.

📁 VI40M120C Similar Datasheet

VI40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)

Other Datasheets by Vishay

Published: Mar 28, 2012 |