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VI40M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VI40M120C Description

New Product V40M120C, VI40M120C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.46 V at IF = 5 A .

VI40M120C Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS

VI40M120C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 2 K MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 120 V 250 A 0.64 V 150 °C Case: TO-220AB and TO-262AA Molding

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Datasheet Details

Part number
VI40M120C
Manufacturer
Vishay ↗
File Size
783.78 KB
Datasheet
VI40M120C_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VI40M120C-like datasheet