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IRFI830G

Power MOSFET

IRFI830G Features

* Isolated package

* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to lead creepage distance = 4.8 mm

* Dynamic dV/dt rating

* Low thermal resistance

* Material categorization: for definitions of compliance please see www.vishay.com/d

IRFI830G General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

IRFI830G Datasheet (905.43 KB)

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Datasheet Details

Part number:

IRFI830G

Manufacturer:

Vishay ↗

File Size:

905.43 KB

Description:

Power mosfet.
www.vishay.com IRFI830G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 500 VGS.

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IRFI830G Power MOSFET Vishay

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