IRFI830G Datasheet - Vishay

IRFI830G, Power MOSFET

www.vishay.com IRFI830G Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 500 VGS.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Details

Part number:

IRFI830G

Manufacturer:

Vishay ↗

File Size:

905.43 KB

Description:

Power MOSFET

Features

* Isolated package
* High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to lead creepage distance = 4.8 mm
* Dynamic dV/dt rating
* Low thermal resistance
* Material categorization: for definitions of compliance please see www. vishay. com/d

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single scr

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