IRFP250 Datasheet, Mosfet, Vishay

IRFP250 Features

• Mosfet
• Dynamic dV/dt rating
• Repetitive avalanche rated Available
• Isolated central mounting hole
• Fast switching Available
• Ease of Paralle

PDF File Details

Part number:

IRFP250

Manufacturer:

Vishay ↗

File Size:

785.36kb

Download:

📄 Datasheet

Description:

Power mosfet. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design

IRFP250 Application

• Applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package beca

TAGS

IRFP250

Vishay

📁 Related Datasheet

IRFP250 - N-Channel MOSFET Transistor (Inchange Semiconductor)
iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.

IRFP250 - N-Channel Power MOSFET (Fairchild)
Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.

IRFP250 - N-CHANNEL MOSFET (ST Microelectronics)
N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 s s s s s IRFP250 VDSS 200V RDS(on) < 0.085Ω ID 33 A TYPICAL RDS(on) = 0.07.

IRFP250 - Power MOSFET (International Rectifier)
.

IRFP250 - Power MOSFET (IXYS)
Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VG.

IRFP250A - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP250A FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Vol.

IRFP250A - Advanced Power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRFP250B - 200V N-Channel MOSFET (Fairchild)
IRFP250B November 2001 IRFP250B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.

IRFP250M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250M，IIRFP250M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo.

IRFP250MPbF - MOSFET (Infineon)
Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle.