IRFP254
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Power mosfet. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design
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IRFP250 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
iscN-Channel MOSFET Transistor
IRFP250
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFP250 - N-Channel Power MOSFET
(Fairchild)
Data Sheet
January 2002
IRFP250
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transis.
IRFP250 - N-CHANNEL MOSFET
(ST Microelectronics)
N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET
TYPE IRFP250
s s s s s
IRFP250
VDSS 200V
RDS(on) < 0.085Ω
ID 33 A
TYPICAL RDS(on) = 0.07.
IRFP250 - Power MOSFET
(Vishay)
.vishay.
IRFP250
Vishay Siliconix
Power MOSFET
D TO-247AC
S
D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
200 VGS = 10 V
.
IRFP250 - Power MOSFET
(International Rectifier)
.
IRFP250 - Power MOSFET
(IXYS)
Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 250
VDSS ID (cont) RDS(on)
= 200 V = 30 A = 85 mΩ
Symbol
Test Conditions
VDSS V
DGR
VGS VG.
IRFP250A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP250A
FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Vol.
IRFP250A - Advanced Power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFP250B - 200V N-Channel MOSFET
(Fairchild)
IRFP250B
November 2001
IRFP250B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
IRFP250M - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP250M，IIRFP250M
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤75mΩ ·Enhancement mo.
