MBR2090CT-E3 Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High Voltage Trench MOS Barrier Schot.

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Datasheet Specifications

Part number: MBR2090CT-E3
Manufacturer: Vishay ↗
File Size: 150.86 KB
Datasheet: MBR2090CT-E3-Vishay.pdf
Description: Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

Applications

* For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Term

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MBR2090CT-E3 Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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