* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definiti
MBR2090CT-M3 Datasheet (118.17 KB)
MBR2090CT-M3
118.17 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com MBR2090CT-M3, MBR20100CT-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PI.
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