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SIR836DP N-Channel MOSFET

SIR836DP Description

New Product N-Channel 40-V (D-S) MOSFET SiR836DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.019 at VGS = 10 V 40 0.0225 at VGS = 4.5 .

SIR836DP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

SIR836DP Applications

* POL
* Synchronous Rectification D G S Ordering Information: SiR836DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25 °C VGS Conti

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N-Channel MOSFET Vishay
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