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SIR850DP N-Channel MOSFET

SIR850DP Description

N-Channel 25-V (D-S) MOSFET SiR850DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.007 at VGS = 10 V 25 0.009 at VGS = 4.5 V PowerPAK S.

SIR850DP Features

* Halogen-free
* TrenchFET® Power MOSFET
* 100 % Rg Tested

SIR850DP Applications

* Synchronous Buck - High-Side D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalan

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N-Channel MOSFET Vishay
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