Part number: Si2347DS
Manufacturer: Vishay (https://www.vishay.com/)
File Size: 190.12KB
Download: 📄 Datasheet
Description: P-Channel MOSFET
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
* Lo.
* Load Switch
* Notebook Adaptor Switch
* DC/DC Converter
* Power Management
TO-236 (SOT-23)
G1 S2
3D.
Image gallery
TAGS
📁 Related Datasheet
Si2341 - P-Channel 30-V (D-S) MOSFET
(Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Si2341 P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.072 @ VGS = - 10 V - 3.
SI2341DS - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET
Si2341DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) - 30
RDS(on) (Ω) 0.072 at VGS = - 10 V 0.120 at VGS = - 4.5 V
ID (A.
SI2341DS-HF - P-Channel MOSFET
(Kexin)
SMD Type
MOSFET
P-Channel MOSFET SI2341DS-HF (KI2341DS-HF)
■ Features
● VDS (V) =-30V ● ID =-2.8A (VGS =-10V) ● RDS(ON) < 72mΩ (VGS =-10V) ● RDS(ON.
SI2342DS - N-Channel MOSFET
(Vishay Siliconix)
www.DataSheet.co.kr
New Product
Si2342DS
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.017 at VGS = 4..
SI2343CDS - P-Channel MOSFET
(VISHAY)
www..com Si2343CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
ID (A)a, e - 5.9 7 nC - 4.6 Qg (Typ.)
PRODUCT SUMMARY
VDS (V) -.
SI2343DS - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET
Si2343DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.053 at VGS = - 10 V
0.086 at VGS = - 4.5 V
ID.
SI2300 - N-Channel MOSFET
(Kexin)
SMD Type
N-Channel Enhancement MOSFET SI2300 (KI2300)
MOSFIECT
Features
VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A.
SI2300 - N-Channel MOSFET
(HAOCHANG)
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS
SI2300 N-Channel Enhancement MOSFET
Features
VDS=20V,RDS(ON)=40m @VGS=.
SI2300 - N-Channel MOSFET
(CCSemi)
MOSFET
N-Channel Enhancement Mode Field Effect Transistor
SI2300
Features
◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.
SI2300 - Plastic-Encapsulate Mosfets
(HOTTECH)
Plastic-Encapsulate Mosfets
FEATURES
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Aval.