SI2342DS Datasheet, mosfet equivalent, Vishay Siliconix

PDF File Details

Part number: SI2342DS

Manufacturer: Vishay (https://www.vishay.com/) Siliconix

File Size: 198.41KB

Download: 📄 Datasheet

Description: N-Channel MOSFET

Datasheet Preview: SI2342DS 📥 Download PDF (198.41KB)

SI2342DS Features and benefits

PRODUCT SUMMARY VDS (V) RDS(on) () 0.017 at VGS = 4.5 V 0.020 at VGS = 2.5 V 8 0.022 at VGS = 1.8 V 0.030 at VGS = 1.5 V 0.075 at VGS = 1.2 V SOT-23 ID (A)a, e 6 6 6 6 .

SI2342DS Application


* Load Switches for Low Voltage Gate Drive
* Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 V D G 1 3 .

Image gallery

Page 2 of SI2342DS Page 3 of SI2342DS

TAGS

SI2342DS
N-Channel
MOSFET
Vishay Siliconix

📁 Related Datasheet

Si2341 - P-Channel 30-V (D-S) MOSFET (Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2341 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.072 @ VGS = - 10 V - 3.

SI2341DS - P-Channel MOSFET (Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET Si2341DS Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.072 at VGS = - 10 V 0.120 at VGS = - 4.5 V ID (A.

SI2341DS-HF - P-Channel MOSFET (Kexin)
SMD Type MOSFET P-Channel MOSFET SI2341DS-HF (KI2341DS-HF) ■ Features ● VDS (V) =-30V ● ID =-2.8A (VGS =-10V) ● RDS(ON) < 72mΩ (VGS =-10V) ● RDS(ON.

SI2343CDS - P-Channel MOSFET (VISHAY)
www..com Si2343CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES ID (A)a, e - 5.9 7 nC - 4.6 Qg (Typ.) PRODUCT SUMMARY VDS (V) -.

SI2343DS - P-Channel MOSFET (Vishay Siliconix)
P-Channel 30-V (D-S) MOSFET Si2343DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.053 at VGS = - 10 V 0.086 at VGS = - 4.5 V ID.

Si2347DS - P-Channel MOSFET (Vishay)
P-Channel 30 V (D-S) MOSFET Si2347DS Vishay Siliconix MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.042 at VGS = - 10 V -5 - 30 0.

SI2300 - N-Channel MOSFET (Kexin)
SMD Type N-Channel Enhancement MOSFET SI2300 (KI2300) MOSFIECT Features VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A.

SI2300 - N-Channel MOSFET (HAOCHANG)
SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD. SOT-23-3 Plastic-Encapsulate MOSFETS SI2300 N-Channel Enhancement MOSFET Features VDS=20V,RDS(ON)=40m @VGS=.

SI2300 - N-Channel MOSFET (CCSemi)
MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.

SI2300 - Plastic-Encapsulate Mosfets (HOTTECH)
Plastic-Encapsulate Mosfets FEATURES Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Aval.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts