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V30202C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number: V30202C
Manufacturer: Vishay ↗
File Size: 201.35 KB
Datasheet: V30202C-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

V30202C Product details

Features

Trench MOS Schottky technology Gen 2.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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