* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V20150S PIN 1 3 1 VF20150S PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 260 °C
VB20150S Datasheet (225.50 KB)
VB20150S
225.50 KB
High-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V20150S, VF20150S, VB20150S & VI20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectif.
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