Part number:
VB20150S-E3
Manufacturer:
File Size:
211.01 KB
Description:
High voltage trench mos barrier schottky rectifier
VB20150S-E3 Datasheet (211.01 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Vishay Semiconductors | VB20150S-E3-8W | DIODE SCHOTTKY 150V 20A TO263AB | DigiKey | 7745 | 100 units |
$0.92
|
🛒 Buy Now |
VB20150S-E3 Datasheet (211.01 KB)
VB20150S-E3
211.01 KB
High voltage trench mos barrier schottky rectifier
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
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