VB20150SG-E3 Datasheet (Vishay) - High Voltage Trench MOS Barrier Schottky Rectifier

VB20150SG-E3, High Voltage Trench MOS Barrier Schottky Rectifier

V20150SG-E3, VF20150SG-E3, VB20150SG-E3, VI20150SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20150SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K 123 VF20150SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20150SG NC K A HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20150SG 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV)

VB20150SG-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for