* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V20150SG PIN 1 3 1 VF20150SG PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 260
VB20150SG Datasheet (225.39 KB)
VB20150SG
225.39 KB
High-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V20150SG, VF20150SG, VB20150SG & VI20150SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Re.
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