* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VB20150C Datasheet (154.25 KB)
VB20150C
154.25 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V20150C, VF20150C, VB20150C, VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
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