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VB30120S High-Voltage Trench MOS Barrier Schottky Rectifier

VB30120S Description

www.DataSheet.co.kr V30120S, VF30120S, VB30120S & VI30120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.

VB30120S Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder

VB30120S Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderabl

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Datasheet Details

Part number
VB30120S
Manufacturer
Vishay ↗
File Size
223.86 KB
Datasheet
VB30120S_Vishay.pdf
Description
High-Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VB30120S-like datasheet