VB30120SG

High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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	Vishay Semiconductors	VB30120SG-E3-4W	DIODE SCHOTTKY 120V 30A TO263AB	DigiKey	0	8000 units	$0.54	🛒 Buy Now

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Datasheet Details

Part number:

VB30120SG

Manufacturer:

Vishay ↗

File Size:

212.06 KB

Description:

High-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V30120SG, VF30120SG, VB30120SG, VI30120SG Vishay General Semicondu.
ctor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A TMBS ® TO.

✔ VB30120SG Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f

✔ VB30120SG Application

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc

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VB30120SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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