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VB30120SG High-Voltage Trench MOS Barrier Schottky Rectifier

VB30120SG Description

www.DataSheet.co.kr New Product V30120SG, VF30120SG, VB30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rec.

VB30120SG Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 3 1
* S

VB30120SG Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB30120SG NC A K HEATSINK 2 3 VI30120SG PIN 1 PIN 2 K MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO

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Datasheet Details

Part number
VB30120SG
Manufacturer
Vishay ↗
File Size
212.06 KB
Datasheet
VB30120SG_Vishay.pdf
Description
High-Voltage Trench MOS Barrier Schottky Rectifier

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High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VB30120SG-like datasheet