Datasheet4U Logo Datasheet4U.com

VB30202C Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB30202C Description

www.vishay.com V30202C, VF30202C, VB30202C, VI30202C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .

VB30202C Features

* Trench MOS Schottky technology Gen 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B10

VB30202C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 1 VB30202C PIN 1 K PIN 2 HEATSINK 3 2 1 VI30202C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 200 V IFSM 260 A VF at IF =

📥 Download Datasheet

Preview of VB30202C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VB30202C
Manufacturer
Vishay ↗
File Size
201.35 KB
Datasheet
VB30202C-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VB3102M - Dual N-Channel MOSFET (VBsemi)
  • VB325SP - HIGH VOLTAGE IGNITION COIL DRIVER POWER IC (STMicroelectronics)
  • VB3407A - P-Channel MOSFET (VBsemi)

📌 All Tags

Vishay VB30202C-like datasheet