VB30M120C Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VB30M120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMB.

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Datasheet Specifications

Part number: VB30M120C
Manufacturer: Vishay ↗
File Size: 100.55 KB
Datasheet: VB30M120C-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available
* Material categorization: for definitions of compliance please see www. vish

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 150 °C D2PAK (TO-263AB) Circuit configuration Common cathode

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VB30M120C Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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