VB30M120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra .

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Datasheet Specifications

Part number: VB30M120C-E3
Manufacturer: Vishay ↗
File Size: 89.00 KB
Datasheet: VB30M120C-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c

Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co

VB30M120C-E3 Distributors

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VB30M120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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