VB30M120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB30M120C-E3
Manufacturer	Vishay ↗
File Size	89.00 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB30M120C-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 VB30M120C-E3 Similar Datasheet

Other Datasheets by Vishay

Published: Aug 22, 2017 |