* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c
VB30M120C-E3 Datasheet (89.00 KB)
VB30M120C-E3
89.00 KB
Dual high voltage trench mos barrier schottky rectifier.
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra .
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