VB40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB40100C
Manufacturer	Vishay ↗
File Size	185.35 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB40100C-Vishay.pdf

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Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1.
Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Published: Apr 22, 2014 |